| PART |
Description |
Maker |
| SP4416 SP4416EU SP4416UEB |
Electroluminescent Lamp Driver with 4-Level Light Intensity Selection Feature
|
SIPEX[Sipex Corporation]
|
| IPF075N03LG IPS075N03LG IPU075N03LG |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
|
Infineon Technologies AG
|
| SPD30N03S2L-20 SPD30N03S2L-20G SPD30N03S2L-2008 |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level
30 A, 30 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Infineon Technologies AG
|
| FDG6304P |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
|
TY Semiconductor Co., L...
|
| AN654 |
5V High-Speed RS-232 Transceivers with 0.1uF Capacitors 5V的高RS - 232收发器与0.1uF电容
New RS-232 ICs Feature 1A Supply Current, 15kV ESD Protection, and 3V Operation
New RS-232 ICs Feature 1A Supply Current/ 15kV ESD Protection/ and 3V Operation
New RS-232 ICs Feature 1uA Supply Current, 15kV ESD Protection, and 3V Operation
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| AD9831 AD9831ASTZ-REEL AD9831-15 |
DIRECT DIGITAL SYNTGESIZER WAVEFORM GENERATOR
DIRECT DIGITAL SYNTHESIZER
|
Analog Devices
|
| CY2212ZC-2 CY2212ZC-2T CY2212 CY2212ZXC-2T |
Direct RambusT 82; Clock Generator (Lite)& gt;< p> Features
Direct Rambus⑩ Clock Generator (Lite)
Direct Rambus Clock Generator (Lite)
|
Cypress Semiconductor
|
| STP40NE03L-20 5372 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| C450DA700-0207 C450DA700-0209 C450DA700-0214 C460D |
Direct Attach LED Technology Rectangular LED RF Performance
Direct Attach DA700 LEDs
|
Cree, Inc
Marktech Corporate
|
| ADG3232 ADG3232BRJ-REEL7 ADG3232BRJ-REEL |
2:1 Multiplexer Level Translator with Bi-directional 1.65 V to 3.6 V Level Shift
Low Voltage 2-1 Mux, Level Translator
From old datasheet system
|
AD[Analog Devices]
|
